受教育经历：

2001.09-2007.01，中国科学院物理研究所，凝聚态物理专业，理学博士

1997.09-2001.06，武汉大学，材料物理专业，理学学士

研究工作经历：

2012.12-至今，武汉大学，副教授

2013.07-2014.07，日本国立物质材料研究机构，访问学者

2009.06-2012.12，武汉大学，讲师

2007.05-2010.06，武汉大学，博士后

主要研究方向：

长期从事氧化物薄膜和异质结的制备。主要使用原子层沉积方法外延生长Ga2O3、ZnO、ZrO2、HfZrO2等多种半导体、电介质、铁电材料薄膜及相关异质结。重点关注新型发光、显示材料及器件制备。作为第一作者或通讯作者发表SCI论文60余篇，获批国家发明专利7项。

近期主持及参与科研项目：

1、湖北省“尖刀”技术攻关项目：氧化镓等第四代超宽禁带半导体材料，2023-2026，300万元，子课题主持；

2、国家重点研发计划：表面等离激元高效光-热转换机理及原型器件，2017-2022，95万元，子课题负责人；

3、国家自然科学基金委员会, 重点项目, 11935011, 新型部件级纳米多层结构复合阻氚涂层制备和性能研究, 2020-2024, 参与。

最近五年内作为通讯作者发表文章情况：

1. Influence of indium doping on electrical performance of gallium oxide thin-film transistors，L. W. Ji, X. Chen, X. Su, J. X. Wan, Z. X. Tu, H. Wu*, C. Liu*, Appl. Phys. Lett. 122, 202105 (2023);

2. Foldable electrochromic NiO films, X. Su, Z. X. Tu, L. W. Ji, H. Wu*, H. X. Xu*, C. Liu*, J. Vac. Sci. Technol. A 41, 043414 (2023);

3. SnSe ambipolar thin film transistor arrays with copper-assisted exfoliation, Z. X. Tu, K. Wang, L. W. Ji, J. X. Wan, Q. R. Luo, H. Wu*, C. Liu*, Appl. Surf. Sci. 617, 156517 (2023);

4. Phase transformation from FeSe to Fe3Se4, Z. X. Tu, Q. F. Li, X. Su, H. Wu*, C. Liu*, J. Allo. Compo. 934, 168045 (2023);

5. Super broadband mid-infrared absorbers with ultrathin folded highly-lossy films, H. Zhang, H. Wu*, X. W Li, J. M. Hao, Q. Q. Li, Z. Q. Guan, H. X. Xu， C. Liu*, J. Coll. Interf. Sci. 629, 254 (2023);

6. Micron channel length ZnO thin film transistors using bilayer electrodes，S. Z. Li, X. Chen, L. Liu, Z. Y. Zeng, S. Chang, H. Wang, H. Wu*, S. B. Long, C. Liu*，J. Coll. Interf. Sci. 622, 769 (2022);

7. Influence of precursor purge time on the performance of ZnO TFTs fabricated by atomic layer deposition, X. Chen, J. X. Wan, L. W. Ji, J. Gao, H. Wu*, C. Liu*，Vacuum 200, 111022(2022);

8. Ferroelectricity of Hf0.5Zr0.5O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers, J. X. Wan, X. Chen, L. W. Ji, Z. X. Tu, H. Wu*, C. Liu*, IEEE Tran. Elec. Dev. 69, 1805 (2022);

9. Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content, W. J. Li, J. X. Wan, Z. X. Tu, H. Li, H. Wu*, C. Liu*, Cera. Inter. 48, 3185 (2022);

10. Study on ZnO micron channel length thin film transistors using different metal electrodes, S. Z. Li, X. Chen, H. Wu*, C. Liu*, J. Allo. Compo. 888, 161610 (2021);

11. Ultra-bright pure green perovskite light-emitting diodes, H. H. Zheng, Z. P. Zhou, T. Wang, P. B. Gui, H. Wu*, C. Liu*, Appl. Phys. Lett. 118, 262102 (2021);

12. Surface functionalization toward top-gated monolayer MoS2 field-effect transistors with ZrO2/Al2O3 as composite dielectrics, T. Guo, H. Wu*, X. Su, Q. B. Guo, C. Liu*, J. Allo. Compo. 871, 159116 (2021);

13. Effective encapsulation of ZnO thin film transistors controlled by thermal energy, X. Chen, J. X. Wan, H. Wu*, C. Liu*, Appl. Surf. Sci. 548, 149253 (2021);

14. van der Waals integration of AZO/MoS(2)ohmic junctions toward high-performance transparent 2D electronics, T. Guo, H. Wu*, X. Chen, Q. Tang, J. X. Wan, Q. B. Guo, S. F. Jia, C. Liu*, J. Mater. Chem. C 8, 9960 (2020);

15. Room Temperature Ferromagnetism in InGaN Nanostructures Induced by Cr(+)ion Implantation, Z. Wang, H. Wu*, Y. Liu, C. Liu*, Nanomaterials 10, 1128 (2020);

16. Highly flexible, stable and transparent capacitors with enhanced performances by composite electrodes of AZO and metallic nanomeshes, T. Guo, G. Z. Zhang, H. Zhang, X. Su, X. Chen, J. X. Wan, H. Wu*, C. Liu*, J. Allo. Compo. 819, 152973 (2020);

17. ZnO bilayer thin film transistors using H2O and O-3 as oxidants by atomic layer deposition, X. Chen, J. X. Wan, H. Wu*, C. Liu*, ACTA Mater. 185, 204 (2020);

18. Tree-like structures of InN nanoparticles on agminated anodic aluminum oxide by plasma-assisted reactive evaporation, H. Li, H. Zhang, H. Wu*, J. M. Hao, C. Liu*, Appl. Surf. Sci. 503, 144309 (2020);

19. Self-Assembly of Carbon Black/AAO Templates on Nanoporous Si for Broadband Infrared Absorption, H. Li, L. Wu, H. Zhang, W. Dai, J. M. Hao, H. Wu*, F. Ren, C. Liu*, ACS Appl. Mater. Inter. 12, 4081 (2020);

20. ZnO-Based Ultraviolet Photodetectors with Tunable Spectral Responses, M. J. Zheng, Y. L. Xu, X. Wang, G. Z. Zhang, W. Li, L. Jiang, L. Zhang, H. Wu*, Q. Q. Lin, C. Liu*, Phys. Stat. Soli.-Rap. Res. Lett. 13， 1900441 (2020)；

21. High-quality-factor flexible and transparent capacitors with Cr-Au nanomeshes as bottom electrodes, T. Guo, G. Z. Zhang, H. Zhang, X. Su, X. Chen, J. X. Wan, H. Wu*, C. Liu*, Nanotechnology 30, 284001 (2019);

22. ZnO ultraviolet photodetectors with an extremely high detectivity and short response time, M. J. Zheng, P. B. Gui, X. Wang, G. Z. Zhang, J. X. Wan, H. Zhang, G. J. Fang, H. Wu*, Q. Q. Lin*, C. Liu*, Appl. Surf. Sci. 481, 437 (2019);

23. GaN metal-oxide-semiconductor devices with ZrO2 as dielectric layers, G. Z. Zhang, M. J. Zheng, J. X. Wan, H. Wu*, C. Liu*, Appl. Surf. Sci. 469, 98 (2019);

24. Transparent and Flexible Thin-Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition, X. Chen, G. Z. Zhang, J. X. Wan, T. Guo, L. Li, Y. P. Yang, H. Wu*, C. Liu*, Adv. Elect. Mater. 5, 1800583 (2019);

25. Surface plasmon-enhanced UV-emission from ZnO by aluminum bowtie nanoantenna arrays, H. Zhang, X. Su, H. Wu*, C. Liu*, J. Allo. Compo. 772, 460 (2019);

最近五年内授权发明专利情况：

[1] 刘昌，苏曦，吴昊，一种能直接发射白光的半导体异质结发光芯片，专利号：ZL 201910550394.0，已授权，授权日：2022年2月1日。

[2] 吴昊，苏曦，刘昌，一种p型GaN上欧姆接触透明电极的制备方法，专利号：ZL 201811132908.2，已授权，授权日：2022年6月7日。

[3] 刘昌，李慧，张恒，张定波，吴昊，红外吸收掺杂硅及其制备方法，专利号：ZL 201910123976.0，已授权，授权日：2021年9月3日。

[4] 刘昌，张恒，吴昊，李慧，一种基于半导体材料的红外宽光谱光吸收器，专利号：ZL 201811119513.9，已授权，授权日：2020年9月8日。

[5] 张恒，刘昌，吴昊，一种Al2O3空心球壳阵列的制备方法，专利号：ZL 201811051213.1，已授权，授权日：2020年11月3日。

[6] 刘昌，李慧，吴昊，张恒，基于阳极氧化铝模板的宽谱减反膜及其制备方法，专利号：ZL 201910136820.6，已授权，授权日：2019年12月10日。